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source ion in Chinese

Pronunciation:
How to pronounce "source ion""source ion" in a sentence

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  • 離子源

Examples

  • Implantation homogeneity study on type - 100 mevva source ion implantor
    源注入機注入均勻性研究
  • Study of nd silicides synthesis by mevva source ion implantation
    源離子注入合成釹硅化物的研究
  • Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation
    附加電極半徑對空心圓管端點附近離子注入劑量的影響
  • Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ) . for potential applications as artificial joint materials and artificial cardiac valve materials , its trobological performance and hemocompatibility has also been evaluated in the present ph . d . thesis
    本研究采用等離子源離子注入?離子束增強沉積技術( psii - ibed )制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關節(jié)材料和人工心臟瓣膜材料的生物摩擦學性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。
  • The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage , frequency , gas flux influenced sp3 bond ratio of dlcs , the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage , reducing frequency , appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic , the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs , but it caused the surface morphology to become asperity
    研究結果表明： ( 1 )用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發(fā)現(xiàn)偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發(fā)現(xiàn)用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能(例如硬度)影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。
  • This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition . we use the raman spectrum , ft - ir , afm and so on to study the dlc film . the result indicates : different bias voltage , frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films , we find high bias voltage , low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd
    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發(fā)現(xiàn)偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  • ( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation . the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model . a negative potential pulse is introduced to form the plasma sheath
    ( )塵埃粒子的充電效應對等離子體源離子注入( ps )鞘層時空演化的影響采用流體模型及自洽的塵埃粒子充電模型，我們研究了等離子體源離子注入時的塵埃等離子體鞘層的時空演化。
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